SEMICONDUCTORS
NPN TIP120-121-122
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for use in power linear and switching applications.
PNP complements are TIP125-126-127
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
Value
60
80
100
60
80
100
5
Unit
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current
8
A
I
B
Base Current
120
mA
@ T
c
< 25°
P
T
Power Dissipation
@ T
a
< 25°
65
Watts
2
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
05/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
