SEMICONDUCTORS
NPN TIP130 – 131 – 132
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are intented for use in power linear and switching applications.
The complementary PNP types are TIP135/136/137
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Ratings
Collector-Base Voltage (I
E
= 0)
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
Value
60
80
100
60
80
100
5
8
12
0.3
70
2
150
-65 to +150
Unit
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
t
J
t
s
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (1)
Base Current
Power Dissipation
Junction Temperature
Storage Temperature range
T
case
t
amb
V
V
A
A
A
W
°C
@ T
mb
< 25°
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.78
62.5
Unit
°C/W
30/10/2012
09/11/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
