SEMICONDUCTORS
TIP150
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
High voltage, high forward and reverse energy designed for industrial and consumer
applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
t
J
t
s
t
L
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (1)
Base Current
Power Dissipation at Case
Temperature (2)
@ T
mb
< 25°
Power Dissipation at free Air
Temperature (3)
Junction Temperature
Storage Temperature range
Lead Temperature 3.2 mm from case for 10 seconde
Value
300
300
8
7
10
1.5
80
Unit
V
V
V
A
A
A
Watts
2
-65 to +150
-65 to +150
260
°C
1. This value applies for t
p
<5ms, duty cycle <10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
2.5
62.5
Unit
°C/W
15/10/2012
09/11/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
