SEMICONDUCTORS
PNP TIP2955
NPN TIP3055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
(*)
Ratings
Test Condition(s)
I
C
= 30 mA, I
B
=0
I
B
=0, V
CE
= 30 V
V
CE
= 70 V, R
BE
= 100
Ω
V
CE
= 70 V, V
BE
= 1.5 V
V
EB
= 7 V, I
C
=0
I
C
= 4 A, I
B
= 400 mA
I
C
= 10 A, I
B
= 3.3 A
I
C
= 4 A, V
CE
= 4 V
I
C
= 4 A, V
CE
= 4 V
I
C
= 10 A, V
CE
= 4 V
V
CE
= 30 V, t= 1.0 s
Non repetitive
V
CE
= 10 V, I
C
= 0.5 A
f= 1 kHz
Min
60
-
-
-
-
-
-
-
20
5
3
2.5
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
700
1
5
5
1.1
3
1.8
70
-
-
-
Unit
V
µA
mA
mA
mA
V
V
-
A
MHz
Collector-Emitter Breakdown
Voltage
Collector Cutoff Current
I
CEO
Collector Cutoff Current
I
CER
Collector Cutoff Current
I
CEX
Emitter Cutoff Current
I
EBO
Collector-Emitter saturation
V
CE(SAT)
(*)
Voltage
V
BE
(*)
h
FE
(*)
I
s/b
f
T
Base-Emitter On Voltage
DC Current Gain
Second Breackdown
collector Current.
With base Forward Biased
Transition Frequency
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
1.5%
15/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
