SEMICONDUCTORS
NPN TIP41-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
Min
Typ
Max
Unit
I
CES
Collector Cutoff Current
I
E
= 0, V
CE
= V
CEO
-
-
0.4
Ma
I
B
= 0, V
CE
= 30V
I
CEO
Collector Cutoff Current
I
B
= 0, V
CE
= 60V
-
-
-
-
0.7
mA
0.7
I
EBO
Emitter Cutoff Current
V
EB
= 5 V, I
C
= 0
-
40
60
80
100
-
-
-
-
-
-
-
1
-
-
-
-
1.5
mA
V
CEO
Collector-Emitter
Breakdown Voltage (*)
I
C
= 30 mA, I
B
= 0
V
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= 6 A, I
B
= 600
mA
V
V
BE(on)
Base-Emitter Voltage (*)
I
C
= 6 A, V
CE
= 4 V
-
-
2
V
V
CE
= 4 V, I
C
= 0.3 A
h
FE
DC Current Gain (*)
V
CE
= 4 V, I
C
= 3 A
30
-
-
-
15
-
75
h
fe
Small Signal Current
Gain
V
CE
= 10 V, I
C
= 0.5
A, f= 1kHz
20
-
-
-
f
T
Current Gain-Bandwidth
Product
V
CE
= 10 V, I
C
= 0.5
A
3
-
-
MHz
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
04/10/2012
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
