SEMICONDUCTORS
PNP TIP42-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
Min
Typ
Mx
Unit
I
CES
Collector Cutoff Current
I
E
= 0, V
CE
= -V
CEO
-
-
-0.4
Ma
I
B
= 0, V
CE
= -30V
I
CEO
Collector Cutoff Current
I
B
= 0, V
CE
= -60V
-
-
-
-
-0.7
mA
-0.7
I
EBO
Emitter Cutoff Current
V
EB
= -5 V, I
C
= 0
-
-40
-60
-80
-100
-
-
-
-
-
-
-
-1
-
-
-
-
-1.5
mA
V
CEO
Collector-Emitter Breakdown
Voltage (*)
I
C
= -30 mA, I
B
= 0
V
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
= -6 A, I
B
= -600
mA
V
V
BE(on)
Base-Emitter Voltage (*)
I
C
= -6 A, V
CE
= -4 V
-
-
-2
V
V
CE
= -4 V, I
C
= -0.3
A
h
FE
DC Current Gain (*)
V
CE
= -4 V, I
C
= -3 A
30
-
-
-
15
-
75
h
fe
Small Signal Current Gain
V
CE
= -10 V, I
C
= -
0.5 A, f= 1kHz
20
-
-
-
f
T
Current Gain-Bandwidth
Product
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
04/10/2012
V
CE
= -10 V, I
C
= -
0.5 A
3
-
-
MHz
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
