NPN BDX33 - BDX33A - BDX33B - BDX33C
PNP BDX34 - BDX34A - BDX34B - BDX34C
符号
评级
测试条件（S ）
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
最小典型单位的Mx
-
-
-
-
-
-
5
-
-
mA
V
CBO
=45 V
T
例
=100°C
I
CBO
集电极 - 基极截止
当前
V
CBO
=60 V
V
CBO
=80 V
V
CBO
=100 V
I
C
= 4.0 A，I
B
= 8.0毫安
-
-
2.5
V
V
CE （ SAT ）
集电极 - 发射极饱和
电压（*）
I
C
= 3.0 A，I
B
= 6.0毫安
-
-
2.5
V
F
正向电压（脉冲
法）
I
F
=8 A
-
-
4.0
V
I
C
= 4.0 A，V
CE
=3.0V
-
-
2.5
V
V
BE
基射极电压（ * ）
I
C
= 3.0 A，V
CE
=3.0V
-
-
2.5
V
CE
= 3.0 V，I
C
=4.0 A
750
-
-
-
h
FE
直流电流增益（ * ）
V
CE
= 3.0 V，I
C
=3.0 A
750
-
-
（ * ）脉冲宽度
≈
300
µs,
占空比
∠
2.0%
（ 1 ）集电极 - 发射极电压限制等V
CECI
= V
额定通过辅助电路
半导体COMSET
5/6
COMSET [ COMSET SEMICONDUCTOR ]
