Huajing Discrete Devices
1.2
1.1
1
0.9
0.8
0.7
0.6
-100
Breakdown Voltage,Normalized
V
DS
=V
GS
ID=250μA
R
○
CS2N60FB9D
1.15
1.1
1.05
1.0
0.95
0.9
0.85
-100
I
D
=250μA
Vgs(th),Threshold Voltage
-50
0
50
100
150
200
-50
Tj,Junction Temperature,C
0
50
100
Tj,Junction Temperature,C
150
200
Figure 11 Typical Theshold Voltage vs Junction Temperature
250
Figure 12 Typical Breakdown Voltage vs Junction Temperature
14
Vgs,gate to Source Voltage , Volts
200
Capacitance,Pf
150
100
50
V
GS
=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
12
10
8
6
4
2
0
VDS=480V
I
D
=1.5A
Ciss
Coss
0
0
Crss
10
20
30
40
Vds,Drain to source Voltage,Volts
50
0
2
4
6
8
10
Qg,Total gate charge, nc
12
14
Figure 13 Typical Capacitance vs Drain to Source Voltage
1.2
Isd,Reverse Drain Current,Amps
1
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
1
1.2
Vsd,Source-Drain to source voltages,volts
Figure 15 Typical Body Diode Transfer Characteristics
+150℃
+25℃
-55℃
Figure 14 Typical Gate Charge vs Gate to Source Voltage
10
Id , Drain Current , Amps
STARTING Tj = 25℃
1
STARTING Tj = 150℃
0.1
If R=0: t
AV
=(L* I
AS
) / (1.38V
DSS
-V
DD
)
If R≠0: t
AV
=(L/R) In[IAS*R/ (1.38V
DSS
-V
DD
)+1]
R equals total Series resistance of Drain circuit
0.01
1.00E-06
Figure 16 Unclamped Inductive Switching Capability
2 0 11
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
tav , Time in Avalanche , Seconds
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 6 o f 1 0
CONSONANCE [ 上海如韵 ]
