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C2M0080120D 参数 Datasheet PDF下载

C2M0080120D图片预览
型号: C2M0080120D
PDF下载: 下载PDF文件 查看货源
内容描述: 碳化硅功率MOSFET Z- FETTM MOSFET [Silicon Carbide Power MOSFET Z-FETTM MOSFET]
分类和应用:
文件页数/大小: 9 页 / 869 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
100  
100  
80  
60  
40  
20  
0
VGS = 20 V  
VGS = 18 V  
VGS = 20 V  
Conditions:  
TJ = 25 °C  
tp = 50 µs  
Conditions:  
TJ = -55 °C  
tp = 50 µs  
VGS = 18 V  
VGS = 16 V  
80  
60  
40  
20  
0
VGS = 16 V  
VGS = 14 V  
VGS = 14 V  
VGS = 12 V  
VGS = 12 V  
VGS = 10 V  
VGS = 10 V  
0
3
6
9
12  
15  
18  
0
3
6
9
12  
15  
18  
Drain-Source Voltage VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 1. Typical Output Characteristics TJ = -55 ºC  
Figure 2. Typical Output Characteristics TJ = 25 ºC  
40  
80  
60  
40  
20  
0
Conditions:  
TJ = 150 °C  
tp = 50 µs  
Parameters:  
VGS = 20 V  
VDS = 20 V  
VGS = 18 V  
V
GS = 16 V  
30  
20  
10  
0
VGS = 14 V  
150 °C  
VGS = 12 V  
VGS = 10 V  
25 °C  
0
3
6
9
12  
15  
18  
0
2
4
6
8
10  
12  
14  
Drain-Source Voltage VDS (V)  
Gate-SourceVoltage, VGS (V)  
Figure 3. Typical Output Characteristics TJ = 150 ºC  
Figure 4. Typical Transfer Characteristics  
2.3  
0.20  
0.16  
0.12  
0.08  
0.04  
Parameters:  
VGS = 20 V  
Parameters:  
VGS = 20 V  
IDS = 20 A  
150 °C  
2.0  
1.8  
1.5  
1.3  
1.0  
0.8  
0.5  
125 °C  
100 °C  
75 °C  
25 °C  
0 °C  
-55 °C  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
Junction Temperature, TJ (°C)  
Drain-Source Current, IDS (A)  
Figure 6. On-Resistance vs. Drain Current  
Figure 5. Normalized On-Resistance vs. Temperature  
3
C2M0080120D Rev. A