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C3D08065A 参数 Datasheet PDF下载

C3D08065A图片预览
型号: C3D08065A
PDF下载: 下载PDF文件 查看货源
内容描述: 碳化硅肖特基二极管 [Silicon Carbide Schottky Diode]
分类和应用: 肖特基二极管
文件页数/大小: 6 页 / 463 K
品牌: CREE [ CREE, INC ]
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C3D08065A
–Silicon Carbide Schottky Diode
Z-R
ec
R
ectifieR
Features
V
RRM
= 650 V
I
F(AVG)
= 8 A
Q
c
= 21 nC
Package
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
TO-220-2
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
CASE
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC P
out
: 800W-1600W
Motor Drives
- Typical Power : 3HP-4HP
Part Number
C3D08065A
Package
TO-220-2
Marking
C3D08065
Maximum Ratings
Symbol
V
RRM
V
RSM
V
DC
I
F(AVG)
I
FRM
Parameter
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
Value Unit
650
650
650
8
57
36
80
60
220
100
43
-55 to
+175
1
8.8
V
V
V
A
A
A
A
W
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
Test Conditions
Note
T
C
=150˚C, DC
T
C
=25˚C, t
P
= 10 ms, Half Sine Wave, D=0.3
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=0.3
T
C
=25˚C, t
p
= 10 mS, Half Sine Wave, D=0.3
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=0.3
T
C
=25˚C, t
P
= 10
µs, Pulse
T
C
=25˚C
T
C
=110˚C
-
D08065A Rev.
Datasheet: C3
I
FSM
I
FSM
P
tot
T
J
, T
stg
Subject to change without notice.
www.cree.com
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