C3D1P7060Q
Silicon Carbide Schottky Diode
V
RRM
I
F;
=
600 V
Z-R
ec
™
R
ectifieR
Features
Package
T
C
<150˚C
= 1.7 A
Q
c
=
5.6 nC
•
•
•
•
•
•
•
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
PowerQFN 3.3x3.3
Benefits
•
•
•
•
•
Small compact surface mount package
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
•
•
Switch Mode Power Supplies
LED Lighting
Part Number
C3D1P7060Q
Package
QFN 3.3
Marking
C3D1P7060
Maximum Ratings
Symbol Parameter
V
RRM
V
RSM
V
DC
I
F
I
FRM
I
FSM
P
tot
T
J
, T
stg
T
c
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
Maximum Case Temperature
Value
600
600
600
1.7
3
7
4.4
15
12
39
17
-55 to
+175
150
Unit
V
V
V
A
A
A
A
W
˚C
˚C
Test Conditions
Note
T
C
<150˚C, No AC Component
T
C
<135˚C, No AC Component
T
C
=25˚C, t
P
=10 ms, Half Sine pulse
T
C
=110˚C, t
P
=10 ms, Half Sine pulse
T
C
=25˚C, t
P
=10 ms, Half Sine pulse
T
C
=110˚C, t
P
=10 ms, Half Sine pulse
T
C
=25˚C
T
C
=110˚C
See
Fig 3
-
D
1
P
760
Q
Re
v.
Da
ta
sh
eet:
C3
Subject to change without notice.
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1
CREE [ CREE, INC ]
