Maximum Ratings at T
A
= 25°C
Notes 1,3, & 4
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 50 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450DA3547-Sxxx00
C460DA3547-Sxxx00
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Bottom Area (μm)
Chip Top Area (μm)
Chip Thickness (μm)
AuSn Bond Pad Width – Anode (um)
AuSn Bond Pad Length – Anode (um)
AuSn Bond Pad Width – Cathode (um)
AuSn Bond Pad Length – Cathode (um)
Bond Pad Gap (μm)
AuSn Bond Pad Thickness (μm)
2.8
2.8
Typ.
3.1
3.1
Max.
3.4
3.4
Note 3
CxxxDA3547-Sxxx00
150 mA
200 mA
150°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
CxxxDA3547-Sxxx00
Dimension
296 x 416
350 x 470
200 x 320
155
90
296
236
296
90
3
Tolerance
±35
±35
±35
±15
±15
±35
±35
±35
±15
±0.5
Notes:
1.
2.
3.
4.
Maximum ratings are package-dependent. The above ratings were determined using a chip sub-mount on MCPCB (with silicone encapsulation and
intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific
package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated
at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average
values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4
packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere
using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
160
140
Maximum Forward Current (mA)
120
100
80
60
40
20
0
50
75
100
125
150
175
Rth
j-a
= 10
Rth
j-a
= 20
Rth
j-a
= 30
Rth
j-a
= 40
C/W
C/W
C/W
C/W
Ambient Temperature (C)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3EL Rev. A
CREE [ CREE, INC ]
