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C450EZ400-0209-2 参数 Datasheet PDF下载

C450EZ400-0209-2图片预览
型号: C450EZ400-0209-2
PDF下载: 下载PDF文件 查看货源
内容描述: 的EZBright功率LED芯片的射频性能朗伯辐射 [EZBright Power Chip LED Rf Performance Lambertian Radiation]
分类和应用: 射频
文件页数/大小: 5 页 / 294 K
品牌: CREE [ CREE, INC ]
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Cree
®
EZ400™ Gen II LED
Data Sheet
CxxxEZ400-Sxxx00-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method.
These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips
are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
EZBright Power Chip LED Rf Performance
90 mW min. @ 150 mA – 450 & 460 nm
75 mW min. @ 150 mA - 470 nm
25 mW min. @ 150 mA - 527 nm
APPLICATIONS
General Illumination
Automobile
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
Low Forward Voltage – 3.5 V Typical at 150 mA
Single Wire Bond Structure
Maximum DC Forward Current - 200 mA
Dielectric Passivation Across Epi Surface
White LEDs
Crosswalk Signals
Television Backlighting
CxxxEZ400-Sxxx00 Chip Diagram
Top View
EZBright LED Chip
380 x 380 μm
2
Backside
Metallization
Gold Bond Pad
112 μm
Dielectric Passivation
t = 170 μm
Cathode (-)
Bottom View
Die Cross Section
.-
CPR3ED Rev
Data Sheet:
Anode (+);
3 μm AuSn
Subject to change without notice.
www.cree.com
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