Cree
®
EZ500™ Gen II LED
Data Sheet
CxxxEZ500-Sxxx00-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method.
These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips
are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
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EZBright Power Chip LED Rf Performance
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110 mW min. @ 150 mA – 450 & 460 nm
90 mW min. @ 150 mA - 470 nm
40 mW min. @ 150 mA - 527 nm
APPLICATIONS
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General Illumination
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Automobile
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
Low Forward Voltage – 3.4 V Typical at 150 mA
Single Wire Bond Structure
Maximum DC Forward Current - 300 mA
Dielectric Passivation Across Epi Surface
White LEDs
Crosswalk Signals
Television Backlighting
CxxxEZ500-Sxxx00-2 Chip Diagram
Top View
EZBright LED Chip
480 x 480 μm
2
Backside
Metallization
Gold Bond Pad
130 x 130 μm
2
t = 170 μm
Cathode (-)
Bottom View
Die Cross Section
.-
CPR3EB Rev
Data Sheet:
Anode (+);
3 μm AuSn
Subject to change without notice.
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