Cree
®
EZ950™ Gen 3 LEDs
Data Sheet
CxxxEZ950-Sxx000-3-x
Cree’s EZBright
®
LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive adhesive, solder paste or solder preforms, as well as flux
eutectic attach. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting and mobile flash.
FEATURES
●
EZBright LED Technology
»
450 nm – 440+ mW
»
460 nm – 420+ mW
»
470 nm – 400+ mW
»
527 nm – 170+ mW
Lambertian Radiation Pattern
Backside Metal versions for various attach methods:
»
»
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“-A” (AuSn) for use with Conductive Adhesives, Flux
Eutectic Attach, Solder Paste & Solder Preforms
“-G” (LTDA) for Low Temperature Flux Eutectic Attach
APPLICATIONS
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General Illumination
»
Aircraft
»
Decorative Lighting
»
Task Lighting
»
Outdoor Illumination
White LEDs
Projection Displays
Automotive Exterior
Mobile Flash
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Low Forward Voltage
Dielectric Passivation across the Epi Surface
Anode-up design
CxxxEZ950-Sxx000-3-x Chip Diagram
.A
CPR3FW Rev
Data Sheet:
Backside Ohmic
Metallization
Mesa (Junction), 900 x 900
µm
930 x 930
µm
Bond pads (2), 130 x 130
µm
Anode (+), 2 places
Thickness 170
µm
Cathode (-)
Bottom View
Top View
Side View
Subject to change without notice.
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