Cree
®
EZ1950-p™ LEDs
Data Sheet (Anode up)
CxxxEZ1950-Sxxxx00-x
Cree’s EZBright
®
LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive adhesive, solder paste or solder preforms, as well as flux
eutectic attach. These vertically structured, low forward voltage LED chips are approximately 220 microns in height
and are tested for conformity to optical and electrical specifications. Cree’s EZ™ chips are useful in a broad range of
applications such as general illumination, automotive lighting and mobile flash.
FEATURES
•
•
•
Lambertian Radiation Pattern
Anode-up design (p-pad up)
EZBright LED Technology, binned @ 700 mA
– 450 nm - 1120+ mW
– 460 nm - 1120+ mW
Low Forward Voltage (Vf) – 3.2 V Typical at 700 mA
Maximum DC Forward Current – 3000 mA
Backside Metal versions for various attach methods:
-A (AuSn) for use with Conductive Adhesives, Flux
Eutectic Attach, Solder Paste & Solder Preforms
-G (LTDA) for Low Temperature Flux Eutectic Attach
APPLICATIONS
•
General Illumination
– Aircraft
– Decorative Lighting
– Task Lighting
– Outdoor Illumination
White LEDs
Projection Displays
Automotive Exterior
Mobile Flash
•
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•
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CxxxEZ1950-Sxxxx00-x Chip Diagram
1930 x 1930
µm
-
CPR3GT Rev
Data Sheet:
Backside Ohmic
Metallization
Mesa (Junction), 1900 x 1900
µm
Bond pads (2), 130 x 130
µm
Thickness
220
µm
Top View
Anode (+), 2 places
Cathode (-)
Side View
Bottom View
Subject to change without notice.
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