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C527EZ1000-0210-2 参数 Datasheet PDF下载

C527EZ1000-0210-2图片预览
型号: C527EZ1000-0210-2
PDF下载: 下载PDF文件 查看货源
内容描述: 的EZBright LED技术低正向电压 [EZBright LED Technology Low Forward Voltage]
分类和应用:
文件页数/大小: 5 页 / 456 K
品牌: CREE [ CREE, INC ]
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Cree
®
EZ1000™ Gen II LEDs
Data Sheet
CxxxEZ1000-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting, and LCD backlighting.
FEATURES
EZBright LED Technology
»
»
»
380 mW min. – 450 nm
360 mW min. – 460 nm
110 mW min. – 527 nm
APPLICATIONS
General Illumination
»
»
»
»
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms, or Flux
Eutectic Attach
Low Forward Voltage
White LEDs
LCD Backlighting
Projection Displays
Automotive
Dielectric Passivation across Epi Surface
CxxxEZ1000-Sxx000-2 Chip Diagram
Top View
EZBright LED
980 x 980 μm
2
Bottom View
Die Cross Section
.A
CPR3EC Rev
Data Sheet:
Dielectric
Passivation
Cathodes (-)
150 x 150 μm
2
t = 170 μm
Gold Bond Pads (2)
Backside Metalization
Anode (+)
3
μm AuSn
1
Subject to change without notice.
www.cree.com