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C527RT200-S0400 参数 Datasheet PDF下载

C527RT200-S0400图片预览
型号: C527RT200-S0400
PDF下载: 下载PDF文件 查看货源
内容描述: 降低正向电压为3.0 V时典型5毫安 [Reduced Forward Voltage 3.0 V Typical at 5 mA]
分类和应用:
文件页数/大小: 6 页 / 376 K
品牌: CREE [ CREE, INC ]
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RazerThin
®
Gen III LEDs
CxxxRT200-Sxxxx
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC
®
substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.
T200 Gen 3 Schematic
FEATURES
Thin 95 μm Chip
Reduced Forward Voltage
3.0 V Typical at 5 mA
460 nm - 10 mW min.
470 nm - 8 mW min.
527 nm - 2 mW min.
RazerThin LED Performance
APPLICATIONS
Mobile Phone Key Pads
White LEDs
Blue LEDs
Green LEDs
PRELIMINARY
Cellular Phone LCD Backlighting
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Single Wire Bond Structure
Class 2 ESD Rating
CxxxRT200-Sxxxx Chip Diagram
Top View
Die Cross Section
Bottom View
.-
CPR3DS Rev
Data Sheet:
170 x 170 μm
G•SiC LED Chip
200 x 200 μm
Anode (+)
Gold Bond Pad
112 μm Diameter
Cathode (-)
t
= 95 μm
Backside
Metallization
90
μm square
Subject to change without notice.
www.cree.com