Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Note 2
CxxxRT260-Sxxxx
50 mA
100 mA
125°C
5V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Note 3
Electrostatic Discharge Classification (MIL-STD-883E)
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C460RT260-Sxxxx
C470RT260-Sxxxx
C527RT260-Sxxxx
Mechanical Specifications
Description
P-N Junction Area (μm)
Top Area (μm)
Bottom Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Width (μm)
2.7
2.7
2.7
Typ.
3.2
3.2
3.3
Max.
3.7
3.7
3.7
Reverse Current
[I(Vr=5V), μA]
Max.
1
1
1
Full Width Half Max.
(λ
D
, nm)
Typ.
24
25
40
CxxxRT260-Sxxxx
Dimension
210 x 210
260 x 260
230 x 230
95
112
1.0
90
Tolerance
± 35
± 35
± 35
± 15
± 20
± 0.5
± 10
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances
products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol
OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
Specifications are subject to change without notice.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DT Rev. -
CREE [ CREE, INC ]
