XThin
®
LEDs
CxxxXT290-Sxx00-A
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
FEATURES
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XThin LED Performance
460 & 470 nm
APPLICATIONS
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Cellular Phone LCD Backlighting
Digital Camera Flash for Mobile Appliance
Mobile Phone Key Pads
– White LEDs
– Blue LEDs
– Green LEDs
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Traffic Signals
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XT-12™
XT-16™
XT-18™
XT-21™
XT-24™
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–
–
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12.0
16.0
18.0
21.0
24.0
mW
mW
mW
mW
mW
min.
min.
min.
min.
min.
505nm – 8.5 mW min.
527nm – 7.0 mW min.
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•
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Thin 115 µm Chip
Low Forward Voltage - 3.2 Typical at 20 mA
Single Wire Bond Structure
Class 2 ESD Rating
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CxxxXT290-Sxx00-A Chip Diagram
Top View
Bottom View
Die Cross Section
H
PR3BV, Rev.
Datasheet: C
G•SiC LED Chip
300 x 300 μm
Gold Bond Pad
105 μm Diameter
Backside
Metalization
Cathode (-)
SiC Substrate
t = 115µm
Anode (+)
Subject to change without notice.
www.cree.com
CREE [ CREE, INC ]
