CAS100H12AM1
1200V, 100A Silicon Carbide
Half-Bridge Module
Z-FET
TM
MOSFET and Z-Rec
TM
Diode
Features
V
DS
I
D
(T
C
=
100˚C)
R
DS(on)
Package
1200 V
100 A
16 mΩ
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Ultra Low Loss
High Ruggedness
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Positive Temperature Coefficient on V
F
and V
DS
(on)
System Benefits
Enables compact and lightweight systems
High efficiency operation
Mitigate over-voltage protection
Ease of transistor gate control
Reduces thermal requirements
Applications
High Power Converters
Motor Drives
Solar Inverters
UPS and SMPS
Induction Heating
Part Number
CAS100H12AM1
Package
Half-Bridge Module
Marking
CAS100H12AM1
Maximum Ratings (T
C
=
25˚C unless otherwise specified)
Symbol
V
DS
V
GS
I
D
I
D(pulse)
Parameter
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current
Pulsed Drain Current
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Stray Inductance
Mounting Torque
Weight
Clearance Distance
Creepage Distance
Value
1200
-5/+20
165
105
400
150
-55 to +125
6000
<15
2.94
200
12.2
17.3
20.2
Unit
V
V
A
A
˚C
˚C
V
nH
Nm
g
mm
mm
mm
Terminal to terminal
Terminal to terminal
Terminal to base plate
AC, t=1min
Measured along maximum path from
pad to Lug
V
GS
= 20V, T
C
=25˚C
V
GS
= 20V, T
C
=100˚C
Pulse width t
P
= 1ms
Limited by T
jmax
,T
C
= 25˚C
Test Conditions
Notes
v. -
H12AM1, Re
eet: CAS100
Datash
T
J
T
C
,T
STG
V
isol
L
Stray
M
G
Subject to change without notice.
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