PRELIMINARY
CGH27030F
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH27030F ideal for 2.3-
2.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
in a ceramic/metal flange package.
Package Typ
e: 440166
PN: CGH270
30F
Typical Performance Over 2.3-2.7GHz
Parameter
Small Signal Gain
EVM @ 21 dBm
EVM @ 36 dBm
Drain Efficiency @ 36 dBm
Input Return Loss
2.3 GHz
14.1
2.3
1.7
26.0
7.9
13.8
2.1
1.7
26.2
7.2
(T
C
= 25˚C)
of Demonstration Amplifier
2.6 GHz
13.2
1.7
1.8
25.8
6.4
2.7 GHz
13.0
1.9
2.0
25.7
7.2
Units
dB
%
%
%
dB
2.4 GHz
2.5 GHz
13.5
1.7
1.8
26.0
6.6
Note:
Measured in the CGH27030F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
•
•
•
•
y 2007
Rev .0 – Ma
2.3 - 2.9 GHz Operation
>13.5 dB Small Signal Gain
26 % Drain Efficiency at 4 W P
OUT
3.7˚C/W Typical thermal resistance under 4.0 W P
AVE
OFDM
WiMAX Fixed Access 802.16-2004 OFDM
WiMAX Mobile Access 802.16e OFDMA
•
•
Subject to change without notice.
www.cree.com/wireless
CREE [ CREE, INC ]
