PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-
2.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a
ceramic/metal flange package.
Package Typ
e: 440162 a
nd 440161
PN: CGHV27
200F and C
GHV27200P
Typical Performance Over 2.5 - 2.7 GHz
Parameter
Gain @ 47 dBm
ACLR @ 47 dBm
Drain Efficiency @ 47 dBm
2.5 GHz
15.0
-36.5
29.0
(T
C
= 25˚C)
2.6 GHz
16.0
-37.5
28.5
of Demonstration Amplifier
2.7 GHz
16.0
-37.0
29.0
Units
dB
dBc
%
Note:
Measured in the CGHV27200-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
•
•
•
tober 2012
Rev 0.1 – Oc
2.5 - 2.7 GHz Operation
16 dB Gain
-37 dBc ACLR at 50 W P
AVE
29 % Efficiency at 50 W P
AVE
High Degree of DPD Correction Can be Applied
•
•
Subject to change without notice.
www.cree.com/rf
1
CREE [ CREE, INC ]
