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CGHV40050F
[DC-6GHz]
型号:   CGHV40050F
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描述:   [DC-6GHz]
文件大小:  782 K
PDF页数:   11 页
联系供应商:  购买产品CGHV40050F
品牌Logo:   
品牌:  CREE [ CREE, INC ]
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CGHV40050
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40050, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications up to 4 GHz. The reference HPA design in the
datasheet operates from 800 MHz to 2 GHz operation instantaneously.
It is a demonstration amplifier to showcase the CGHV40050’s high
efficiency, high gain and wide bandwidth capabilities. The device can be
used for a range of applications from narrow band UHF, L and S Band as
Package Type
s: 440193 & 4
40206
PN: CGHV400
50F & CGHV4
0050P
well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and
pill package.
Typical Performance Over 800 MHz - 2.5 GHz
(T
C
= 25˚C),
50 V
Parameter
Small Signal Gain
Saturated Output Power
Drain Efficiency @ P
SAT
Input Return Loss
800 MHz
17.6
65
63
5
1.2 GHz
16.9
70
63
5.5
1.4 GHz
17.7
63
60
4.2
1.8 GHz
17.5
77
53
8
2.0 GHz
14.8
60
52
5
Units
dB
W
%
dB
Note:
Measured CW in the CGHV40050F-AMPapplication circuit.
Features
015
Up to 4 GHz Operation
77 W Typical Output Power
17.5 dB Small Signal Gain at 1.8 GHz
Application Circuit for 0.8 - 2.0 GHz
53 % Efficiency at P
SAT
50 V Operation
Rev 1.0 - July 2
Subject to change without notice.
www.cree.com/rf
1