PRELIMINARY
CRF2400D
0 W SiC RF Power MESFET Die
Cree’s CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor
Field-Effect Transistor (MESFET). SiC has superior properties compared
to silicon or gallium arsenide, including higher breakdown voltage, higher
saturated electron drift velocity, and higher thermal conductivity. SiC
MESFETs offer greater power density and wider bandwidths compared
to Si and GaAs transistors.
PN: CRF240
10D
FEATURES
APPLICATIONS
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15 dB Small Signal Gain
10 W Minimum P
1dB
48 V Operation
High Breakdown Voltage
High Temperature Operation
Up to 5 GHz Operation
High Efficiency
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Wideband Military Communications
Secure Comms for Homeland Defense
Class A, AB Amplifiers
TDMA, EDGE, CDMA and W-CDMA
Broadband Amplifiers
MMDS
Packaging Information
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Bare die are shipped in Gel-Pak® containers.
Non-adhesive tacky membrane immobilizes die during
shipment.
ly 2006
Rev .5 – Ju
Subject to change without notice.
www.cree.com/wireless
CREE [ CREE, INC ]
