Cree
®
EZ700™ Gen II LED
Data Sheet
CxxxEZ700-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The
optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, in addition to using the flux eutectic
method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s
EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of
applications, such as general illumination, automotive lighting and LCD backlighting.
FEATURES
•
EZBright Power Chip LED Rf Performance
− 240 mW min. - 450 & 460 nm
− 200 mW min. - 470 nm
− 90 mW min. - 527 nm
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Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
Low Forward Voltage – 3.6 V Typical at 350
mA
Single Wire Bond Structure
Dielectric Passivation Across Epi Surface
APPLICATIONS
•
General Illumination
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Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
Projection Lighting
White LEDs
Crosswalk Signals
Backlighting
Automotive
CxxxEZ700-Sxx000-2 Chip Diagram
Top View
EZBright LED Chip
680 x 680 µm
Backside
Metallization
Gold Bond Pad
150 x 150 µm
Bottom View
Die Cross Section
v. B
CPR3DW Re
Data Sheet:
Cathode (-)
t = 170 µm
Dielectric Passivation
Anode (+);
3 µm AuSn
Subject to change without notice.
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1
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