Cree
®
UltraThin™ Gen III LEDs
Data Sheet
CxxxUT190-Sxxxx-30
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC
®
substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
•
•
Small Chip – 190 x 190 x 85 μm
UT LED Performance
–
–
–
•
450 & 460 nm – 14 mW min.
470 nm – 12 mW min.
527 nm – 4.0 mW min.
APPLICATIONS
•
•
•
•
Mobile Phone Keypads
Audio Product Display Lighting
Mobile Appliance Keypads
Automotive Applications
Low Forward Voltage
–
2.9 V Typical at 5 mA
•
•
Single Wire Bond Structure
Class 2 ESD Rating
CxxxUT190-Sxxxx-30 Chip Diagram
Top View
Die Cross Section
Bottom View
A
CPR3EO Rev
Data Sheet:
Junction
160 x 160 μm
Anode (+)
85-μm Diameter
190 x 190 μm
Bottom Surface
105 x 105 μm
Cathode (-)
80 x 80 μm
t = 85 μm
Subject to change without notice.
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