Preliminary
EnerChip CC CBC3105
Absolute Maximum Ratings
PARAMETER
V
DD
with respect to GND
ENABLE and V
MODE
Input Voltage
V
BAT
(1)
V
CHG
V
OUT
RESET Output Voltage
CP, Flying Capacitor Voltage
CN
(1)
(1)
CONDITION
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
MIN
GND - 0.3
GND - 0.3
3.0
3.0
GND - 0.3
GND - 0.3
GND - 0.3
GND - 0.3
TYPICAL
-
-
-
-
-
-
-
-
MAX
6.0
V
DD
+0.3
4.15
4.15
6.0
V
OUT
+0.3
6.0
V
DD
+0.3
UNITS
V
V
V
V
V
V
V
V
No external connections to these pins are allowed, except parallel EnerChips.
Operating Characteristics
PARAMETER
Output Voltage V
OUT
Output Voltage V
OUT
(backup mode)
EnerChip Pulse Discharge Current
Self-Discharge (5 yr average)
Operating Temperature
Storage Temperature
Cell Resistance (25°C)
Recharge Cycles
(to 80% of rated ca-
pacity; 4.1V charge
voltage)
25°C
40°C
CONDITION
V
DD
> V
TH
V
DD
< V
TH
MIN
-
2.2
-
-
-20
-40
-
-
5000
1000
2500
500
-
-
5
TYPICAL
V
DD
3.3
2.5
1.5
(1)
25
-
7
31
-
-
-
-
11
45
-
MAX
-
3.6
-
-
+70
+125
(2)
11
48
-
-
-
-
22
70
-
UNITS
V
V
-
% per year
% per year
°C
°C
kΩ
cycles
cycles
cycles
cycles
minutes
µAh
-
Non-recoverable
Recoverable
Variable - see App. Note 1025
-
-
Charge cycle 2
Charge cycle 1000
10% depth-of-discharge
50% depth-of discharge
10% depth-of-discharge
50% depth-of-discharge
Charge cycle 2
Charge cycle 1000
40nA discharge; 25°C
Recharge Time (to 80% of rated
capacity; 4.1V charge; 25°C)
Capacity
(1)
(2)
First month recoverable self-discharge is 5% average.
Storage temperature is for uncharged EnerChip CC device.
Note: All specifications contained within this document are subject to change without notice.
DS-72-21 Rev E
©2012 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
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