Preliminary
CBC34123 EnerChip™ RTC
Absolute Maximum Ratings
PARAMETER / PIN
V
DD
with respect to GND
ENABLE Input Voltage
V
EC
(1)
V
CHG
(1)
CONDITION
25°C
25°C
25°C
25°C
25°C
MIN
GND - 0.3
GND - 0.3
3.0
3.0
GND - 0.3
TYPICAL
-
-
-
-
-
MAX
6.0
V
DD
+0.3
4.15
4.15
2.7
UNITS
V
V
V
V
V
RESET Output Voltage
INT/, CE, TEST, OSCI, OSCO, SDO,
SDI, SCL, CLKOE, CLKOUT
(1)
See NXP PCF2123 Data Sheet
No external connections to these pins are allowed, except parallel EnerChips.
Integrated EnerChip Thin Film Battery Operating Characteristics
PARAMETER
Self-Discharge (5 yr. average)
Operating Temperature
Storage Temperature
Recharge Cycles
(to 80% of rated
capacity)
25°C
40°C
CONDITION
Non-recoverable
Recoverable
MIN
-
-
-20
-40
5000
1000
2500
500
-
-
5
TYPICAL
2.5
1.5
(1)
25
-
-
-
-
-
11
45
-
MAX
-
-
+70
+125
(2)
-
-
-
-
22
70
-
UNITS
% per year
% per year
°C
°C
cycles
cycles
cycles
cycles
minutes
µAh
-
-
10% depth-of-discharge
50% depth-of discharge
10% depth-of-discharge
50% depth-of-discharge
Charge cycle 2
Charge cycle 1000
25°C
Recharge Time (to 80% of rated
capacity; 4.1V charge; 25°C)
Capacity (see Figure 5)
(1)
(2)
First month recoverable self-discharge is 5% average.
Storage temperature is for uncharged EnerChip CC device.
Figure 5: Typical Discharge Characteristics of the CBC005 EnerChip Within the CBC34123
Note: All specifications contained within this document are subject to change without notice.
DS-72-31 V.08
©2012 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
Page 4 of 9
CYMBET [ CYMBET CORPORATION ]
