Preliminary
CBC34813 EnerChip™ RTC
CHARGE PUMP CHARACTERISTICS
(PERTAINS TO INTEGRATED CBC910 POWER MANAGEMENT CIRCUIT)
(NOTE: THIS TABLE PROVIDES IMPORTANT INFORMATION WHEN CONNECTING ADDITIONAL ENERCHIPS TO VCHG.)
V
DD
= 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
ENABLE=V
DD
to Charge
Pump Active
ENABLE Falling to
Charge Pump Inactive
Charge Pump Frequency
Charge Pump
Resistance
V
CHG
Output Voltage
V
CHG
Temp. Coefficient
Charge Pump Current
Drive
Charge Pump on Voltage
(1)
SYMBOL
t
CPON
t
CPOFF
f
CP
R
CP
CONDITION
ENABLE to 3rd charge pump
pulse, V
DD
=3.3V
-
Delta V
BAT
, for I
BAT
charging
current of 1µA to 100µA
C
FLY
=0.1µF, C
BAT
=1.0µF
C
FLY
=0.1µF, C
BAT
=1.0µF,
I
OUT
=1µA, Temp=+25ºC
I
OUT
=1µA, Temp=+25ºC
I
BAT
=1mA
C
FLY
=0.1µF, C
BAT
=1.0µF
ENABLE=V
DD
MIN
60
0
-
150
MAX
80
1
120
300
UNITS
µs
µs
KHz
(1)
Ω
V
CP
T
CCP
I
CP
V
ENABLE
4.075
-2.0
1.0
2.5
4.125
-2.4
-
-
V
mV/ºC
mA
V
f
CP
= 1/t
CPPER
ADDITIONAL CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC
V
BAT
Cutoff Threshold
Cutoff Temp. Coefficient
V
BAT
Cutoff Delay Time
SYMBOL
V
BATCO
T
CCO
t
COOFF
CONDITION
I
OUT
=1µA
-
V
BAT
from 40mV above to
20mV below V
BATCO
I
OUT
=1µA
LIMITS
UNITS
V
mV/ºC
ms
MIN
2.75
+1
40
MAX
3.25
+2
-
Note: All specifications contained within this document are subject to change without notice
DS-72-38 V.01
©2013 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
Page 8 of 9
CYMBET [ CYMBET CORPORATION ]
