欢迎访问ic37.com |
会员登录 免费注册
发布采购

CY62128EV30LL-45ZXI 参数 Datasheet PDF下载

CY62128EV30LL-45ZXI图片预览
型号: CY62128EV30LL-45ZXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8)静态RAM [1 Mbit (128K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 946 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
 浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第3页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第4页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第5页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第6页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第7页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第8页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第9页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第10页  
CY62128EV30 MoBL
®
Document History Page
Document Title: CY62128EV30 MoBL
®
1 Mbit (128K x 8) Static RAM
Document Number: 38-05579
REV.
**
*A
ECN NO. Issue Date Orig. of
Change
285473
461631
See ECN
See ECN
PCI
NXR
New Data Sheet
Converted from Preliminary to Final
Removed 35 ns Speed Bin
Removed “L” version of CY62128EV30
Removed Reverse TSOP I package from Product offering.
Changed I
CC (Typ)
from 8 mA to 11 mA and I
CC (Max)
from 12 mA to 16 mA for f = f
max
Changed I
CC (max)
from 1.5 mA to 2.0 mA for f = 1 MHz
Changed I
SB2 (max)
from 1
µA
to 4
µA
Changed I
SB2 (Typ)
from 0.5
µA
to 1
µA
Changed I
CCDR (max)
from 1
µA
to 3
µA
Changed the AC Test load Capacitance value from 50 pF to 30 pF
Changed t
LZOE
from 3 to 5 ns
Changed t
LZCE
from 6 to 10 ns
Changed t
HZCE
from 22 to 18 ns
Changed t
PWE
from 30 to 35 ns
Changed t
SD
from 22 to 25 ns
Changed t
LZWE
from 6 to 10 ns
Updated the Ordering Information table.
Updated the Block Diagram on page # 1
Added final Automotive-A and Automotive-E information
Added footnote #9 related to I
SB2
and I
CCDR
Updated Ordering Information table
Description of Change
*B
*C
464721
1024520
See ECN
See ECN
NXR
VKN
Document #: 38-05579 Rev. *C
Page 11 of 11