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CY62256LL-70SNC 参数 Datasheet PDF下载

CY62256LL-70SNC图片预览
型号: CY62256LL-70SNC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ( 32K ×8 )静态RAM [256K (32K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 395 K
品牌: CYPRESS [ CYPRESS ]
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CY62256  
Output Current into Outputs (LOW)............................. 20 mA  
Maximum Ratings  
Static Discharge Voltage.......................................... > 2001V  
(Above which the useful life may be impaired. For user guide-  
(per MIL-STD-883, Method 3015)  
lines, not tested.)  
Latch-up Current.................................................... > 200 mA  
Storage Temperature .................................65°C to +150°C  
Operating Range  
Range  
Commercial  
Industrial  
Ambient Temperature with  
Power Applied..............................................-55°C to +125°C  
Ambient Temperature (TA)[4]  
0°C to +70°C  
VCC  
Supply Voltage to Ground Potential  
5V ± 10%  
5V ± 10%  
5V ± 10%  
(Pin 28 to Pin 14) ........................................... –0.5V to +7.0V  
–40°C to +85°C  
–40°C to +125°C  
DC Voltage Applied to Outputs  
in High-Z State[3] ....................................–0.5V to VCC + 0.5V  
Automotive  
DC Input Voltage[3].................................–0.5V to VCC + 0.5V  
Electrical Characteristics Over the Operating Range  
CY6225655  
CY6225670  
Parameter  
VOH  
VOL  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Test Conditions  
VCC = Min., IOH = 1.0 mA  
VCC = Min., IOL = 2.1 mA  
Min. Typ.[2] Max. Min. Typ.[2] Max. Unit  
2.4  
2.2  
2.4  
V
V
V
0.4  
0.4  
VIH  
VCC  
2.2  
VCC  
+0.5V  
+0.5V  
VIL  
IIX  
IOZ  
ICC  
Input LOW Voltage  
Input Leakage Current GND < VI < VCC  
–0.5  
–0.5  
0.8  
–0.5  
0.8  
+0.5  
+0.5  
55  
V
+0.5 –0.5  
+0.5 –0.5  
55  
µA  
µA  
mA  
Output Leakage Current GND < VO < VCC, Output Disabled –0.5  
VCC Operating Supply VCC = Max., IOUT = 0 mA,  
28  
28  
Current  
f = fMAX = 1/tRC  
L
LL  
25  
25  
0.5  
0.4  
0.3  
1
50  
50  
2
0.6  
0.5  
5
50  
5
10  
15  
25  
25  
0.5  
0.4  
0.3  
1
2
0.1  
0.1  
50  
50  
2
0.6  
0.5  
5
50  
5
10  
mA  
mA  
mA  
mA  
mA  
mA  
µA  
µA  
µA  
µA  
ISB1  
Automatic CE  
Max. VCC, CE > VIH,  
Power-down Current—  
TTL Inputs  
VIN > VIH or VIN < VIL, f =  
L
LL  
fMAX  
ISB2  
Automatic CE  
Max. VCC, CE> VCC 0.3V  
Power-down Current—  
CMOS Inputs  
VIN > VCC 0.3V, or VIN <  
L
LL  
LL - Ind’l  
2
0.3V, f = 0  
0.1  
0.1  
0.1  
LL -  
Auto  
Capacitance[5]  
Parameter  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
Max.  
6
8
Unit  
pF  
pF  
CIN  
COUT  
TA = 25°C, f = 1 MHz,  
V
CC = 5.0V  
Notes:  
3.  
V
A
(min.) = 2.0V for pulse durations of less than 20 ns.  
IL  
4.  
T
is the “Instant-On” case temperature.  
5. Tested initially and after any design or process changes that may affect these parameters.  
Document #: 38-05248 Rev. *C  
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