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CY6264-70SNC 参数 Datasheet PDF下载

CY6264-70SNC图片预览
型号: CY6264-70SNC
PDF下载: 下载PDF文件 查看货源
内容描述: 8K ×8静态RAM [8K x 8 Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 256 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
 浏览型号CY6264-70SNC的Datasheet PDF文件第1页浏览型号CY6264-70SNC的Datasheet PDF文件第2页浏览型号CY6264-70SNC的Datasheet PDF文件第3页浏览型号CY6264-70SNC的Datasheet PDF文件第5页浏览型号CY6264-70SNC的Datasheet PDF文件第6页浏览型号CY6264-70SNC的Datasheet PDF文件第7页浏览型号CY6264-70SNC的Datasheet PDF文件第8页  
PRELIMINARY
Switching Waveforms
Read Cycle No.1
[8, 9]
t
RC
ADDRESS
t
OHA
DATA OUT
PREVIOUS DATA VALID
t
AA
DATA VALID
CY6264
CY6264-5
Read Cycle No. 2
[10, 11]
CE
1
t
RC
CE
2
OE
OE
t
ACE
t
DOE
t
LZOE
HIGH IMPEDANCE
t
LZCE
V
CC
SUPPLY
CURRENT
t
PU
50%
t
HZOE
t
HZCE
DATA VALID
t
PD
ICC
50%
ISB
CY6264-6
HIGH
IMPEDANCE
DATA OUT
Write Cycle No. 1 (WE Controlled)
[9, 11]
t
WC
ADDRESS
t
SCE1
CE
1
CE
2
t
SCE2
OE
t
AW
WE
t
SA
t
PWE
t
HA
t
SD
DATA IN
DATA
IN
VALID
t
HZWE
DATA I/O
DATA UNDEFINED
t
HD
t
LZWE
HIGH IMPEDANCE
CY6264-7
Notes:
8. Device is continuously selected. OE, CE = V
IL
. CE
2
= V
IH.
9. Address valid prior to or coincident with CE transition LOW.
10. WE is HIGH for read cycle.
11. Data I/O is High Z if OE = V
IH
, CE
1
= V
IH
, or WE = V
IL
.
4