CY7C109
CY7C1009
Switching Characteristics
[3, 5]
Over the Operating Range
7C109-20
7C1009-20
Parameter
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
1
LOW to Data Valid, CE
2
HIGH to Data
Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
[6, 7]
CE
1
LOW to Low Z, CE
2
HIGH to Low Z
[7]
CE
1
HIGH to High Z, CE
2
LOW to High Z
[6, 7]
CE
1
LOW to Power-Up, CE
2
HIGH to
Power-Up
CE
1
HIGH to Power-Down, CE
2
LOW to
Power-Down
Write Cycle Time
CE
1
LOW to Write End, CE
2
HIGH to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
[7]
WE LOW to High Z
[6, 7]
20
15
15
0
0
12
10
0
3
8
0
20
3
8
0
25
0
8
5
10
0
35
3
20
8
0
10
5
15
20
20
5
25
10
0
15
25
25
5
35
15
35
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min.
Max.
7C109-25
7C1009-25
Min.
Max.
7C109-35
7C1009-35
Min.
Min.
Unit
WRITE CYCLE
[8]
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
25
20
20
0
0
15
15
0
5
10
35
25
25
0
0
20
20
0
5
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data Retention Characteristics
Over the Operating Range (L Version Only)
Parameter
V
DR
I
CCDR
t
CDR
t
R
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
No input may exceed V
CC
+ 0.5V
V
CC
= V
DR
= 2.0V,
CE
1
> V
CC
– 0.3V or CE
2
< 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
Min.
2.0
50
0
t
RC
Max
Unit
V
µA
ns
ns
Shaded areas contain preliminary information.
Document #: 38-05032 Rev. **
Page 5 of 12
CYPRESS [ CYPRESS SEMICONDUCTOR ]
