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CY7C1019DV33-10ZSXI 参数 Datasheet PDF下载

CY7C1019DV33-10ZSXI图片预览
型号: CY7C1019DV33-10ZSXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8)静态RAM [1-Mbit (128K x 8) Static RAM]
分类和应用:
文件页数/大小: 11 页 / 387 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1019DV33
Switching Characteristics
Over the Operating Range
[6]
Parameter
Read Cycle
t
power[7]
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU[10]
t
PD[10]
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
V
CC
(typical) to the first access
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
[8, 9]
CE LOW to Low Z
[9]
CE HIGH to High Z
[8, 9]
CE LOW to Power-Up
CE HIGH to Power-Down
0
10
3
5
0
5
3
10
5
100
10
10
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
–10 (Industrial)
Min.
Max.
Unit
Write Cycle
[11, 12]
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
[9]
WE LOW to High Z
[8, 9]
10
8
8
0
0
7
5
0
3
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
7. t
POWER
gives the minimum amount of time that the power supply should be at typical V
CC
values until the first memory access can be performed
8. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads. Transition is measured when the outputs enter a high impedance state.
9. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
10. This parameter is guaranteed by design and is not tested.
11. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
12. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
Document #: 38-05481 Rev. *D
Page 5 of 11