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CY7C1021CV33-10ZC 参数 Datasheet PDF下载

CY7C1021CV33-10ZC图片预览
型号: CY7C1021CV33-10ZC
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×16静态RAM [64K x 16 Static RAM]
分类和应用:
文件页数/大小: 12 页 / 233 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1021CV33
64K x 16 Static RAM
Features
• Pin- and function-compatible with CY7C1021BV33
• High speed
— t
AA
= 8, 10, 12, and 15 ns
• CMOS for optimum speed/power
• Low active power
— 360 mW (max.)
• Data retention at 2.0V
• Automatic power-down when deselected
• Independent control of upper and lower bits
• Available in 44-pin TSOP II, 400-mil SOJ, 48-ball FBGA
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
9
to I/O
16
. See
the truth table at the end of this data sheet for a complete
description of Read and Write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a Write operation
(CE LOW, and WE LOW).
The CY7C1021CV33 is available in standard 44-pin TSOP
Type II 400-mil-wide SOJ packages, as well as a 48-ball
FBGA.
Functional Description
The CY7C1021CV33 is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
Logic Block Diagram
DATA IN DRIVERS
Pin Configuration
SOJ / TSOP II
Top View
A
4
A
3
A
2
A
1
A
0
CE
I/O
1
I/O
2
I/O
3
I/O
4
V
CC
V
SS
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
15
A
14
A
13
A
12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
64K x 16
RAM Array
512 X 2048
I/O
1
–I/O
8
I/O
9
–I/O
16
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
5
A
6
A
7
OE
BHE
BLE
I/O
16
I/O
15
I/O
14
I/O
13
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
NC
A
8
A
9
A
10
A
11
NC
ROW DECODER
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
CY7C1021CV33-8
8
95
5
CY7C1021CV33-10
10
90
5
CY7C1021CV33-12
12
85
5
CY7C1021CV33-15
15
80
5
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document #: 38-05132 Rev. *C
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
SENSE AMPS
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised October 30, 2002