欢迎访问ic37.com |
会员登录 免费注册
发布采购

CY7C1041BL-15ZC 参数 Datasheet PDF下载

CY7C1041BL-15ZC图片预览
型号: CY7C1041BL-15ZC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16静态RAM [256K x 16 Static RAM]
分类和应用:
文件页数/大小: 11 页 / 253 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
 浏览型号CY7C1041BL-15ZC的Datasheet PDF文件第2页浏览型号CY7C1041BL-15ZC的Datasheet PDF文件第3页浏览型号CY7C1041BL-15ZC的Datasheet PDF文件第4页浏览型号CY7C1041BL-15ZC的Datasheet PDF文件第5页浏览型号CY7C1041BL-15ZC的Datasheet PDF文件第6页浏览型号CY7C1041BL-15ZC的Datasheet PDF文件第7页浏览型号CY7C1041BL-15ZC的Datasheet PDF文件第8页浏览型号CY7C1041BL-15ZC的Datasheet PDF文件第9页  
CY7C1041B
256K x 16 Static RAM
Features
High speed
— t
AA
= 12 ns
Low active power
— 1540 mW (max.)
Low CMOS standby power (L version)
— 2.75 mW (max.)
2.0V Data Retention (400
µW
at 2.0V retention)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE and OE features
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through A
17
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
17
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
0
to I/O
7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
8
to I/O
15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
0
through I/O
15
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1041B is available in a standard 44-pin
400-mil-wide body width SOJ and 44-pin TSOP II package
with center power and ground (revolutionary) pinout.
Functional Description
The CY7C1041B is a high-performance CMOS static RAM
organized as 262,144 words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
Logic Block Diagram
INPUT BUFFER
Pin Configuration
SOJ
TSOP II
Top View
A
0
A
1
A
2
A
3
A
4
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
5
A
6
A
7
A
8
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
256K x 16
ARRAY
1024 x 4096
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN
DECODER
BHE
WE
CE
OE
BLE
A
17
A
16
A
15
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
14
A
13
A
12
A
11
A
10
ROW DECODER
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
SENSE AMPS
Cypress Semiconductor Corporation
Document #: 38-05142 Rev. *A
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised March 24, 2005