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CY7C1041D-10ZSXI 参数 Datasheet PDF下载

CY7C1041D-10ZSXI图片预览
型号: CY7C1041D-10ZSXI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )静态RAM [4-Mbit (256K x 16) Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 336 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1041D
Switching Waveforms
(continued)
Read Cycle No. 2 (OE Controlled)
[15,16]
ADDRESS
t
RC
CE
t
ACE
OE
BHE, BLE
t
DOE
t
LZOE
t
DBE
t
LZBE
DATA OUT
V
CC
SUPPLY
CURRENT
HIGH IMPEDANCE
t
LZCE
t
PU
50%
DATA VALID
t
PD
50%
ISB
t
HZCE
t
HZBE
t
HZOE
HIGH
IMPEDANCE
ICC
Write Cycle No. 1 (CE Controlled)
[17, 18]
t
WC
ADDRESS
CE
t
SA
t
SCE
t
AW
t
PWE
WE
t
BW
BHE, BLE
t
SD
DATAI/O
t
HD
t
HA
Notes:
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE transition LOW
17. Data I/O is high impedance if OE or BHE and/or BLE= V
IH
.
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document #: 38-05472 Rev. *C
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