CY7C1049DV33
4-Mbit (512K x 8) Static RAM
Features
• Pin- and function-compatible with CY7C1049CV33
• High speed
— t
AA
= 10 ns
• Low active power
— I
CC
= 90 mA @ 10 ns (Industrial)
• Low CMOS standby power
— I
SB2
= 10 mA
• 2.0V data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
• Available in Lead-Free 36-lead (400-mil) Molded SOJ
V36 and 44-pin TSOP II ZS44 packages
Functional Description
[1]
The CY7C1049DV33 is a high-performance CMOS Static
RAM organized as 512K words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. Writing
to the device is accomplished by taking Chip Enable (CE) and
Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O
0
through I/O
7
) is then written into the location specified on the
address pins (A
0
through A
18
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a Write
operation (CE LOW, and WE LOW).
The CY7C1049DV33 is available in standard 400-mil-wide
36-pin SOJ package and 44-pin TSOP II package with center
power and ground (revolutionary) pinout.
Logic Block Diagram
Pin Configuration
SO
J
Top View
A
0
A
1
A
2
A
3
A
4
CE
I/O
0
I/O
1
V
CC
GND
I/O
2
I/O3
WE
A
5
A
6
A
7
A
8
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A
18
A
17
A
16
A
15
OE
I/O
7
I/O
6
GND
V
CC
I/O
5
I/O
4
A
14
A
13
A
12
A
11
A
10
NC
TSOP II
Top View
NC
NC
A
0
A
1
A
2
A
3
A
4
CE
I/O
0
I/O
1
V
CC
V
SS
I/O
2
I/O
3
WE
A
5
A
6
A
7
A
8
A
9
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
I/O
0
INPUT
BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
I/O
1
ROW DECODER
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
512K x 8
CE
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
-10 (Industrial)
10
90
10
-12 (Automotive)
[2]
12
95
15
Unit
ns
mA
mA
Notes:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
2. Automotive product information is Preliminary.
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
NC
NC
NC
A
18
A
17
A
16
A
15
OE
I/O
7
I/O
6
V
SS
V
CC
I/O
5
I/O
4
A
14
A
13
A
12
A
11
A
10
NC
NC
NC
Cypress Semiconductor Corporation
Document #: 38-05475 Rev. *C
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised April 3, 2006
CYPRESS [ CYPRESS SEMICONDUCTOR ]
