CY7C1329
Electrical Characteristics
Over the Operating Range
Parameter
V
DD
V
DDQ
V
OH
V
OL
V
IH
V
IL
I
X
Description
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[7]
Input Load Current
except ZZ and MODE
GND
≤
V
I
≤
V
DDQ
3.3V
−5%/+10%
3.3V
−5%/+10%
V
DD
= Min., I
OH
=
−4.0
mA
V
DD
= Min., I
OL
= 8.0 mA
2.0
–0.3
−5
–30
5
–5
30
−5
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
13.3-ns cycle, 75 MHz
I
SB1
Automatic CS
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
f = f
MAX
= 1/t
CYC
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
13.3-ns cycle, 75 MHz
5
325
260
260
60
50
50
5
Test Conditions
Min.
3.135
3.135
2.4
0.4
V
DDQ
+
0.3V
0.8
5
Max.
3.6
3.6
Unit
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
Input Current of MODE Input = V
SS
Input = V
DDQ
Input Current of ZZ
I
OZ
I
DD
Output Leakage
Current
V
DD
Operating Supply
Current
Input = V
SS
Input = V
DDQ
GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
I
SB2
Automatic CS
Max. V
DD
, Device Deselected, V
IN
All speeds
Power-Down
≤
0.3V or V
IN
> V
DDQ
– 0.3V, f = 0
Current—CMOS Inputs
Automatic CS
Max. V
DD
, Device Deselected, or
Power-Down
V
IN
≤
0.3V or V
IN
> V
DDQ
– 0.3V
Current—CMOS Inputs f = f
MAX
= 1/t
CYC
Automatic CS
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = 0
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
13.3-ns cycle, 75 MHz
I
SB3
40
30
30
25
mA
mA
mA
mA
I
SB4
Capacitance
[9]
Parameter
C
IN
C
CLK
C
I/O
Description
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V,
V
DDQ
= 3.3V
Max.
4
4
4
Unit
pF
pF
pF
Note:
9. Tested initially and after any design or process changes that may affect these parameters.
7
CYPRESS [ CYPRESS SEMICONDUCTOR ]
