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CY7C185-35VC 参数 Datasheet PDF下载

CY7C185-35VC图片预览
型号: CY7C185-35VC
PDF下载: 下载PDF文件 查看货源
内容描述: 8K ×8静态RAM [8K x 8 Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 205 K
品牌: CYPRESS [ CYPRESS ]
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CY7C185  
Switching Waveforms  
Read Cycle No.1[10,11]  
t
RC  
ADDRESS  
t
AA  
t
OHA  
DATA OUT  
PREVIOUS DATA VALID  
DATA VALID  
Read Cycle No.2[12,13]  
t
RC  
CE  
1
CE  
2
t
ACE  
OE
t
HZOE  
t
DOE  
t
HZCE  
t
LZOE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA OUT  
DATA VALID  
t
LZCE  
t
PD  
t
PU  
ICC  
ISB  
V
CC  
SUPPLY  
CURRENT  
50%  
50%  
[11,13]  
Write Cycle No. 1 (WE Controlled)  
t
WC  
ADDRESS  
t
CE  
1
SCEI  
t
t
HA  
AW  
t
CE  
SCE2  
2
t
SA  
t
PWE  
WE  
OE  
t
SD  
t
HD  
DATA VALID  
NOTE 14  
t
IN  
DATA I/O  
HZOE  
10. Device is continuously selected. OE, CE1 = VIL. CE2 = VIH  
.
11. WE is HIGH for read cycle.  
12. Data I/O is High Z if OE = VIH, CE1 = VIH, WE = VIL, or CE2=VIL  
.
13. The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. CE1 and WE must be LOW and CE2 must be HIGH  
to initiate write. A write can be terminated by CE1 or WE going HIGH or CE2 going LOW. The data input set-up and hold timing should be referenced to the  
rising edge of the signal that terminates the write.  
14. During this period, the I/Os are in the output state and input signals should not be applied.  
Document #: 38-05043 Rev. *A  
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