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CY7C199-15PC 参数 Datasheet PDF下载

CY7C199-15PC图片预览
型号: CY7C199-15PC
PDF下载: 下载PDF文件 查看货源
内容描述: 32K x 8静态RAM [32K x 8 Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 13 页 / 319 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C199
32K x 8 Static RAM
Features
• High speed
— 10 ns
• Fast t
DOE
• CMOS for optimum speed/power
• Low active power
— 467 mW (max, 12 ns “L” version)
• Low standby power
— 0.275 mW (max, “L” version)
• 2V data retention (“L” version only)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. This device
has an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199 is in the
standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Functional Description
The CY7C199 is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
Logic Block Diagram
Pin Configurations
DIP / SOJ / SOIC
Top View
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
22
23
24
25
26
27
28
1
2
3
4
5
6
7
LCC
Top View
3 2 1 28 27
4
26 A
4
5
25 A
3
6
24 A
2
7
23 A
1
8
22 OE
9
21 A
0
20 CE
10
11
19 I/O
7
12
18 I/O
6
1314151617
I/O2
GND
I/O3
I/O4
I/O5
A7
A6
A5
VCC
WE
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
CE
WE
OE
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
1024 x 32 x 8
ARRAY
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
3
I/O
4
I/O
5
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
21
20
19
18
17
16
15
14
13
12
11
10
9
8
TSOP I
Top View
(not to scale)
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
A
10
A
12
A
13
A
11
Selection Guide
7C199
-8
8
120
L
Maximum CMOS Standby Current
L
Shaded area contains advance information.
A
14
Maximum Access Time
Maximum Operating Current
0.5
7C199
-10
10
110
90
0.5
0.05
7C199
-12
12
160
90
10
0.05
7C199
-15
15
155
90
10
0.05
7C199
-20
20
150
90
10
0.05
7C199
-25
25
150
80
10
0.05
7C199
-35
35
140
70
10
0.05
7C199
-45
45
140
10
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document #: 38-05160 Rev. *A
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised January 7, 2003