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1N5817 参数 Datasheet PDF下载

1N5817图片预览
型号: 1N5817
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0Amp硅肖特基势垒整流器 [1.0Amp Silicon Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 3 页 / 137 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号1N5817的Datasheet PDF文件第2页浏览型号1N5817的Datasheet PDF文件第3页  
CYStech Electronics Corp.
1.0Amp
Silicon Schottky Barrier Rectifiers
Spec. No. : C331LB
Issued Date : 2004.07.05
Revised Date :
Page No. : 1/3
1N581XLB Series
Features
Low forward voltage drop
High current capability
High surge current capability
High reliability
Epitaxial construction
Mechanical Data
Case: DO-41 Molded Plastic.
Terminals: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end.
Epoxy: UL 94V-0 rate flame retardant
Mounting position: Any
Weight: 0.34 grams
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Type Number
1N5817
1N5818
1N5819
Maximum Recurrent Peak Reverse Voltage
20
30
40
Maximum RMS Voltage
14
21
28
Maximum DC Blocking Voltage
20
30
40
Maximum Average Forward Rectified Current
1
.375”(9.5mm) lead length at Ta=90°C
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
25
Superimposed on Rated Load(JEDEC method)
Maximum Instantaneous Forward Voltage @ 1.0A
0.45
0.55
0.6
Maximum DC Reverse Current at Rated DC
1
(@Ta=25°C)
Blocking Voltage
10
(@Ta=100°C)
Typical Junction Capacitance (Note 1)
110
Typical thermal resistance(Note 2)
80
Operating Temperature Range Tj
-65 to +125
Storage Temperature Range Tstg
-65 to +150
Notes : 1. Measured at 1 MHz and applied reverse voltage of 4.0Volts
2. Thermal resistance from junction to ambient, vertical PCB mounting, 0.5”(12.7mm) lead length.
Units
V
V
V
A
A
V
mA
pF
℃/W
°C
°C
1N581XLB
CYStek Product Specification