CYStech Electronics Corp.
1.0Amp
Silicon Schottky Barrier Rectifiers
Spec. No. : C331LB
Issued Date : 2004.07.05
Revised Date :
Page No. : 1/3
1N581XLB Series
Features
•
Low forward voltage drop
•
High current capability
•
High surge current capability
•
High reliability
•
Epitaxial construction
Mechanical Data
•
Case: DO-41 Molded Plastic.
•
Terminals: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed
•
Polarity: Color band denotes cathode end.
•
Epoxy: UL 94V-0 rate flame retardant
•
Mounting position: Any
•
Weight: 0.34 grams
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Type Number
1N5817
1N5818
1N5819
Maximum Recurrent Peak Reverse Voltage
20
30
40
Maximum RMS Voltage
14
21
28
Maximum DC Blocking Voltage
20
30
40
Maximum Average Forward Rectified Current
1
.375”(9.5mm) lead length at Ta=90°C
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
25
Superimposed on Rated Load(JEDEC method)
Maximum Instantaneous Forward Voltage @ 1.0A
0.45
0.55
0.6
Maximum DC Reverse Current at Rated DC
1
(@Ta=25°C)
Blocking Voltage
10
(@Ta=100°C)
Typical Junction Capacitance (Note 1)
110
Typical thermal resistance(Note 2)
80
Operating Temperature Range Tj
-65 to +125
Storage Temperature Range Tstg
-65 to +150
Notes : 1. Measured at 1 MHz and applied reverse voltage of 4.0Volts
2. Thermal resistance from junction to ambient, vertical PCB mounting, 0.5”(12.7mm) lead length.
Units
V
V
V
A
A
V
mA
pF
℃/W
°C
°C
1N581XLB
CYStek Product Specification