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1N5822 参数 Datasheet PDF下载

1N5822图片预览
型号: 1N5822
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0Amp 。轴向引线肖特基势垒二极管 [3.0Amp. Axial Leaded Schottky Barrier Diodes]
分类和应用: 二极管
文件页数/大小: 3 页 / 136 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号1N5822的Datasheet PDF文件第2页浏览型号1N5822的Datasheet PDF文件第3页  
CYStech Electronics Corp.
3.0Amp. Axial Leaded Schottky Barrier Diodes
Spec. No. : C330LA
Issued Date : 2003.04.16
Revised Date :
Page No. : 1/3
1N582XLA Series
Features
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0
Low leakage current
High surge capability
High temperature soldering: 250°C/10 seconds at terminals
High reliability
Mechanical Data
Case: DO-201AD molded plastic.
Terminals: Axial leads, solderable per MIL-STD-202 method 208
Polarity: Indicated by cathode band.
Weight: 1.10 gram
Maximum Ratings and Electrical Characteristics
(
Rating at 25°C ambient temperature unless otherwise noted. Single phase, half wave, 60Hz, resistive or
inductive load. )
Parameter
Conditions
Type
Symbol
1N5820 1N5821 1N5822
Units
min
Repetitive peak reverse
voltage
Maximum RMS voltage
Maximum DC blocking
voltage
Maximum instantaneous
I
F
=3A
(Note 1)
forward voltage
Maximum average forward
rectified current
8.3ms single half sine wave superimposed
Peak forward surge current
on rated load(JEDEC method)
V
R
=V
RRM
,T
A
=25
(Note 1)
Maximum DC reverse
current
V
R
=V
RRM
,T
A
=125
(Note 1)
Maximum thermal
Junction to ambient
(Note 2)
resistance
Diode junction capacitance f=1MHz and applied 4V reverse voltage
Storage temperature
Operating temperature
Notes: 1.Pulse test, pulse width=300μsec, 2% duty cycle
typ
30
21
30
0.500
3
80
2
20
40
250
-65~+125
-65~+125
max
40
28
40
0.525
V
V
V
V
A
A
mA
mA
/w
pF
V
RRM
V
RMS
V
R
V
F
I
O
I
FSM
I
R
R
th
,
JA
C
J
Tstg
T
J
20
14
20
0.475
1N582XLA
CYStek Product Specification