CYStech Electronics Corp.
Dual P-Channel MOSFET
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
Page No. : 1/ 8
BSS84S6R
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(-2.5V)
• Pb-free package
BV
DSS
I
D
R
DSON
@V
GS
=-10V, I
D
=-100mA
D
=-100mA
D
=-30mA
-50V
-170mA
5Ω (typ)
6Ω (typ)
8Ω (typ)
Equivalent Circuit
BSS84S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C, V
GS
=-5V
Continuous Drain Current @ T
A
=85°C, V
GS
=-5V
Pulsed Drain Current
(Notes 1, 2)
T
A
=25℃
Maximum Power Dissipation
T
A
=85℃
Operating Junction and Storage Temperature
(Note 3)
Symbol
V
DS
V
GS
(Note 3)
(Note 3)
I
D
I
DM
P
D
Tj, Tstg
Limits
-50
±20
-170
-120
-800
300
160
-55~+150
Unit
V
mA
mA
mW
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
BSS84S6R
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
