BTA1015A3 参数 Datasheet PDF下载

CYStech Electronics Corp.

General Purpose PNP Epitaxial Planar Transistor

Spec. No. : C306A3-T

Issued Date : 2003.08.26

Revised Date :

Page No. : 1/4

BTA1015A3

Description

•

The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification.

•

High voltage and high current : V

CEO

=-50V(min), I

C

=-150mA(max)

•

High H

FE

and excellent linearity

•

Complementary to BTC1815A3

.

Symbol

BTA1015A3

Outline

TO-92

B：Base

C：Collector

E：Emitter

ECB

Absolute Maximum Ratings

(Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Power Dissipation

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

Pd

R

θJA

Tj

Tstg

Limits

-50

-50

-5

-150

-50

400

250

125

-55~+125

Unit

V

V

V

mA

mA

mW

°C/W

°C

°C

BTA1015A3

CYStek Product Specification