CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C315M3
Issued Date : 2005.01.25
Revised Date : 2007.12.20
Page No. : 1/6
BTA1664M3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.24V (typical), at I
C
/ I
B
=- 500mA /- 20mA
•
Pb-free package
Symbol
BTA1664M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
-40
-25
-5
-2
0.6
1
*2
2
*3
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note : *1 Single pulse, Pw=10ms
*2 When mounted on FR-4 PCB with area measuring 10×10×1 mm
*3
When mounted on ceramic with area measuring 40×40×1 mm
BTA1664M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
