CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTA1722N3
Features
•
High Breakdown Voltage:BVCEO≥-350V
•
Complementary to BTC4062N3
Symbol
BTA1722N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current---continuous
Power Dissipation @TA=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
-350
-350
-5
-500
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTA1722N3
CYStek Product Specification