CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 1/4
BTB1132M3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.15V (typical), at I
C
/ I
B
=- 0.5A /- 50mA
•
Complementary to BTD1664M3
Symbol
BTB1132M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
-40
-32
-5
-1
-2.5
0.6
2
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
*1
*2
Note : *1 Single pulse, Pw=10ms
*2 When mounted on a 40
×
40
×
0.7mm ceramic board.
BTB1132M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
