CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 1/4
BTB1182J3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.7 V (typical), at I
C
/ I
B
= -2A / -0.5A
•
Excellent current gain characteristics
•
Complementary to BTD1758J3
Symbol
BTB1182J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note
:
Single Pulse , Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
-40
-30
-5
-2
-5
(Note)
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
BTB1182J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
